- F. Hashimoto, and N. Mori, "Comparative simulation study of intra-layer band-to-band tunneling in monolayer transition metal dichalcogenides," Japanese Journal of Applied Physics, Vol. 60, SBBH12 (1-9), 2021, DOI: 10.35848/1347-4065/abdad1
- J. Okada, F. Hashimoto, and N. Mori, "Reduction of order of device Hamiltonian with adaptive moment estimation," Japanese Journal of Applied Physics, Vol. 60, SBBH08 (1-5), 2021, DOI: 10.35848/1347-4065/abd6df
- T. Taniguchi, T. Ishibe, R. Hosoda, Y. Wagatsuma, Md. M. Alam, K. Sawano, M. Uenuma, Y. Uraoka, Y. Yamashita, N. Mori, and Y. Nakamura, "Thermoelectric Si1-xGex and Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators," Applied Physics Letters, Vol. 117, 141602 (1-6), 2020, DOI: 10.1063/5.0023820
- H. Tanaka and N. Mori, "Analysis of Hall mobility in two-dimensional disordered systems," Semiconductor Science and Technology, Vol. 35, No. 9, 095015 (1-9), 2020, DOI: 10.1088/1361-6641/ab9d0b
- F. Hashimoto, H. Tanaka, and N. Mori, "Material dependence of band-to-band tunneling in van der Waals heterojunctions of transition metal dichalcogenides," Journal of Physics D: Applied Physics, Vol. 53, 255107 (1-13), 2020, DOI: 10.1088/1361-6463/ab7ca6
- Y. Le Thi, Y. Kamakura, and N. Mori, "A comparison of mechanisms for improving dark current characteristics in barrier infrared photodetectors," Japanese Journal of Applied Physics, Vol. 59, No. 4, 044005 (1-6), 2020, DOI: 10.35848/1347-4065/ab7e77
- H. Tanaka, T. Kimoto, and N. Mori, "Theoretical analysis of band structure effects on impact ionization coefficients in wide-bandgap semiconductors," Applied Physics Express, Vol. 13, 041006 (1-4), 2020, DOI: 10.35848/1882-0786/ab7f16
- H. Tanaka and N. Mori, "Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron hall mobility in 4H-SiC MOSFETs," Japanese Journal of Applied Physics, Vol. 59, 031006 (1-11), 2020, DOI: 10.35848/1347-4065/ab7271
- Q. Lv, F. Yan, N. Mori, W. Zhu, C. Hu, Z. R. Kudrynskyi, Z. D. Kovalyuk, Amalia Patanè, and K. Wang, "Interlayer band-to-band tunneling and negative differential resistance in van der Waals BP/InSe field‐effect transistors," Advanced Functional Materials, Vol. 30, 1910713 (1-7), 2020, DOI: 10.1002/adfm.201910713
- S. Sakane, T. Ishibe, K. Mizuta, M. Kashino, K. Watanabe, T. Fujita, Y. Kamakura, N. Mori, and Y. Nakamura, "Methodology of thermoelectric power factor enhancement by nanoscale thermal management in bulk SiGe composites," ACS Applied Energy Materials, Vol. 3, 1235-1241, 2020, DOI: 10.1021/acsaem.9b02340
- Y. Le Thi, Y. Kamakura, and N. Mori, "Evaluation of the optical characteristics of a type-II InAs/GaSb superlattice infrared p-i-n photodetector," Japanese Journal of Applied Physics, Vol. 58, 081003 (1-8), 2019, DOI: 10.7567/1347-4065/ab2b67
- Y. Kajiwara and N. Mori, "Nonequilibrium Green function simulation of coupled electron–phonon transport in one-dimensional nanostructures," Japanese Journal of Applied Physics, Vol. 58, SDDE05 (1-8), 2019, DOI: 10.7567/1347-4065/ab0df3
- S. Makihira and N. Mori, "Intra-collisional field effect in one-dimensional GaN nanowires," Japanese Journal of Applied Physics, Vol. 58, SCCB26 (1-6), 2019, DOI: 10.7567/1347-4065/ab1067
- T. Hoshino and N. Mori, "Electron mobility calculation for two-dimensional electron gas in InN/GaN digital alloy channel high electron mobility transistors," Japanese Journal of Applied Physics, Vol. 58, SCCD10 (1-6) 2019, DOI: 10.7567/1347-4065/ab0409
- S. Sakane, T. Ishibe, T. Taniguchi, N. Naruse, Y. Mera, T. Fujita, Md. M. Alam, K. Sawano, N. Mori, and Y. Nakamura, "Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled si nanostructures," Materials Today Energy, Vol. 13, 56-63, 2019, DOI: 10.1016/j.mtener.2019.04.014
- Y. Le Thi, Y. Kamakura, and N. Mori, "Simulation of dark current characteristics of type-II InAs/GaSb superlattice mid-wavelength infrared p–i–n photodetector", Japanese Journal of Applied Physics, Vol. 58, 044002 (1-7), 2019, DOI: 10.7567/1347-4065/ab03ca
- T. Ishibe, A. Tomeda, K. Watanabe, Y. Kamakura, N. Mori, N. Naruse, Y. Mera, Y. Yamashita, and Y. Nakamura, "Methodology of thermoelectric power factor enhancement by controlling nanowire interface," ACS Applied Materials & Interfaces, Vol. 10, 37709–37716, 2018, DOI: 10.1021/acsami.8b13528
- K. Tatsumi and T. Matsuoka, "A software level calibration based on Bayesian regression for a successive stochastic approximation analog-to-digital converter system," IEEE Transactions on Cybernetics, DOI: 10.1109/TCYB.2018.2795238
- T. Kuroda and N. Mori, "Resonant enhancement of band-to-band tunneling in in-plane MoS2/WS2 heterojunctions," Japanese Journal of Applied Physics, Vol. 57, 04FP03 (1-6), 2018, DOI: 10.7567/JJAP.57.04FP03
- T. Hoshino and N. Mori, "Electron mobility of two-dimensional electron gas in InGaN heterostructures: Effects of alloy disorder and random dipole scatterings," Japanese Journal of Applied Physics, Vol. 57, 04FG06 (1-8), 2018, DOI: 10.7567/JJAP.57.04FG06
- S. Endo, O. Kubo, N. Nakashima, S. Iwaguma, R. Yamamoto, Y. Kamakura, H. Tabata, and M. Katayama, "√3×√3 germanene on Al(111) grown at nearly room temperature," Applied Physics Express, Vol. 11, 015502 (1-4), 2018, DOI: 10.7567/APEX.11.015502
- F. Hashimoto and N. Mori, "Inter-layer coupling effects on vertical electron transport in multilayer graphene nanoribbons," Journal of Physics: Conference Series, Vol. 906, 012004 (1-4), 2017, DOI: 10.1088/1742-6596/906/1/012004
- S. Tani, T. Matsuoka, Y. Hirai, T. Kurata, K. Tatsumi, T. Asano, M. Ueda, and T. Kamata, "Behavior-level analysis of a successive stochastic approximation analog-to-digital conversion system for multi-channel biomedical data acquisition," IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, Vol. E100-A, No. 10, pp. 2073-2085, 2017, DOI: 10.1587/transfun.E100.A.2073
- O. Makarovsky, L. Turyanska, N. Mori, M. Greenaway, L. Eaves, A. Patanè, M. Fromhold, S. Lara-Avila, S. Kubatkin, and R. Yakimova, "Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots," 2D Materials, Vol. 4, 031001 (1-7), 2017, DOI: 10.1088/2053-1583/aa76bb
- T. G. Etoh, A. Q. Nguyen, Y. Kamakura, K. Shimonomura, T. Y. Le, and N. Mori, "The theoretical highest frame rate of silicon image sensors," Sensors, Vol. 17, No. 3, 483 (1-15), 2017, DOI: 10.3390/s17030483
- F. Hashimoto, N. Mori, O. Kubo, and M. Katayama, "Electronic states of coupled graphene nanoribbons," Japanese Journal of Applied Physics, Vol. 56, 045001 (1-8), 2017, DOI: 10.7567/JJAP.56.045001
- L. Turyanska, O. Makarovsky, L. Eaves, A. Patanè, and N. Mori, "Mobility enhancement of CVD graphene by spatially correlated charges," 2D Materials, Vol. 4, 025026 (1-6), 2017, DOI: 10.1088/2053-1583/aa55b4
- R. Suda, M. Yagi, A. Kojima, N. Mori, J. Shirakashi, and N. Koshida, "Liquid-phase deposition of thin Si and Ge films based on ballistic hot electron incidence," Materials Science in Semiconductor Processing, Vol. 70, 44-49, 2017, DOI: 10.1016/j.mssp.2016.12.022
- S. Isami, T. Kamata, J. Bae, S. Tani, W. Jun, K. Ohara, and T. Matsuoka, "A study on performance improvement of RF Transmitter IC using genetic algorithm," Microwave and Optical Technology Letters, Vol. 58, No. 12, pp. 2905-2912, 2016, DOI: 10.1002/mop.30180
- D. M. Di Paola, M. Kesaria, O. Makarovsky, A. Velichko, L. Eaves, N. Mori, A. Krier, and A. Patanè, "Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode," Scientific Reports, Vol. 6, 32039 (1-8), 2016, DOI: 10.1038/srep32039
- G. Mil'nikov and N. Mori, "Random phonon model of dissipative electron transport in nanowire MOSFETs," Journal of Computational Electronics, Vol. 15, pp. 1179-1191, 2016, DOI: 10.1007/s10825-016-0865-7
- T. Asano, Y. Hirai, S. Tani, S. Yano, I. Jo, T. Matsuoka, "An offset distribution modification technique of stochastic flash ADC," IEICE Electronics Express, Vol. 13, No. 6, pp. 20160115, 2016
- R. Suda, M. Yagi, A. Kojima, N. Mori, J. Shirakashi, and N. Koshida, "Reductive deposition of thin Cu films using ballistic hot electrons as a printing beam," Journal of The Electrochemical Society, Vol. 163, No. 6, pp. E162-E165, 2016
- J. Bae, S. Radhapuram, I. Jo, T. Kihara, and T. Matsuoka, "A design of 0.7-V 400-MHz digitally controlled oscillator," IEICE Transactions on Electronics, Vol. E98-C, No. 12, pp. 1179-1186, 2015
- N. Mori, R. J. A. Hill, A. Patanè, and L. Eaves, "Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors," Journal of Physics: Conference Series, Vol. 647, pp. 012059 (1-4), 2015
- A. Suzuki, T. Kamioka, Y. Kamakura, and T. Watanabe, "Particle-based semiconductor device simulation accelerated by GPU computing," Journal of Advanced Simulation in Science and Engineering, Vol. 2, No. 1, pp. 211-224, 2015
- G. Wakimura, Y. Yamauchi, and Y. Kamakura, "Simulation and modeling of off-leakage current in InGaZnO thin-film transistors," Journal of Advanced Simulation in Science and Engineering, Vol. 2, No. 1, pp. 201-210, 2015
- C. Clendennen, N. Mori, and H. Tsuchiya, "Non-equilibrium Green function simulations of graphene, silicene, and germanene nanoribbon field-effect transistors," Journal of Advanced Simulation in Science and Engineering, Vol. 2, No. 1, pp. 171-177, 2015
- J. Bae, S. Radhapuram, I. Jo, T. Kihara, and T. Matsuoka, "A subthreshold low-voltage low-phase-noise CMOS LC-VCO with resistive biasing," Circuits and Systems, Vol. 6, No. 5, pp. 136-142, 2015
- I. Jo and T. Matsuoka,"Accurate extraction of effective gate resistance in RF MOSFET," Circuits and Systems,Vol. 6, No. 5, pp. 143–151,2015
- M. Ichii, R. Ishida, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa, "Computational study of effects of surface roughness and impurity scattering in Si double-gate junctionless transistors," IEEE Transactions on Electron Devices, Vol. 62, No. 4, pp. 1255-1261, 2015
- R. Suda, M. Yagi, A. Kojima, R. Mentek, N. Mori, J. Shirakashi, and N. Koshida, "Deposition of thin Si and Ge films by ballistic hot electron reduction in a solution-dripping mode and its application to the growth of thin SiGe films," Japanese Journal of Applied Physics, Vol. 54, No.4S, 04DH11 (1-5), 2015
- Y. Dei, Y. Kishiwada, R. Yamane, T. Inoue, T. Matsuoka, "Low-power wireless on-chip microparticle manipulation system," Japanese Journal of Applied Physics, Vol. 54, No.4S, 04DE10 (1-7), 2015