2017

  1. K. Tatsumi and T. Matsuoka, "A software level calibration based on Bayesian regression for a successive stochastic approximation analog-to-digital converter system," IEEE Transactions on Cybernetics, DOI: 10.1109/TCYB.2018.2795238
  2. T. Kuroda and N. Mori, "Resonant enhancement of band-to-band tunneling in in-plane MoS2/WS2 heterojunctions," Japanese Journal of Applied Physics, Vol. 57, 04FP03 (1-6), 2018, DOI: 10.7567/JJAP.57.04FP03
  3. T. Hoshino and N. Mori, "Electron mobility of two-dimensional electron gas in InGaN heterostructures: Effects of alloy disorder and random dipole scatterings," Japanese Journal of Applied Physics, Vol. 57, 04FG06 (1-8), 2018, DOI: 10.7567/JJAP.57.04FG06
  4. F. Hashimoto and N. Mori, "Inter-layer coupling effects on vertical electron transport in multilayer graphene nanoribbons," Journal of Physics: Conference Series, Vol. 906, 012004 (1-4), 2017, DOI: 10.1088/1742-6596/906/1/012004
  5. S. Tani, T. Matsuoka, Y. Hirai, T. Kurata, K. Tatsumi, T. Asano, M. Ueda, and T. Kamata, "Behavior-level analysis of a successive stochastic approximation analog-to-digital conversion system for multi-channel biomedical data acquisition," IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, Vol. E100-A, No. 10, pp. 2073-2085, 2017, DOI: 10.1587/transfun.E100.A.2073
  6. O. Makarovsky, L. Turyanska, N. Mori, M. Greenaway, L. Eaves, A. Patanè, M. Fromhold, S. Lara-Avila, S. Kubatkin, and R. Yakimova, "Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots," 2D Materials, Vol. 4, 031001 (1-7), 2017, DOI: 10.1088/2053-1583/aa76bb

2016

  1. T. G. Etoh, A. Q. Nguyen, Y. Kamakura, K. Shimonomura, T. Y. Le, and N. Mori, "The theoretical highest frame rate of silicon image sensors," Sensors, Vol. 17, No. 3, 483 (1-15), 2017, DOI: 10.3390/s17030483
  2. F. Hashimoto, N. Mori, O. Kubo, and M. Katayama, "Electronic states of coupled graphene nanoribbons," Japanese Journal of Applied Physics, Vol. 56, 045001 (1-8), 2017, DOI: 10.7567/JJAP.56.045001
  3. L. Turyanska, O. Makarovsky, L. Eaves, A. Patanè, and N. Mori, "Mobility enhancement of CVD graphene by spatially correlated charges," 2D Materials, Vol. 4, 025026 (1-6), 2017, DOI: 10.1088/2053-1583/aa55b4
  4. R. Suda, M. Yagi, A. Kojima, N. Mori, J. Shirakashi, and N. Koshida, "Liquid-phase deposition of thin Si and Ge films based on ballistic hot electron incidence," Materials Science in Semiconductor Processing, Vol. 70, 44-49, 2017, DOI: 10.1016/j.mssp.2016.12.022
  5. S. Isami, T. Kamata, J. Bae, S. Tani, W. Jun, K. Ohara, and T. Matsuoka, "A study on performance improvement of RF Transmitter IC using genetic algorithm," Microwave and Optical Technology Letters, Vol. 58, No. 12, pp. 2905-2912, 2016, DOI: 10.1002/mop.30180
  6. D. M. Di Paola, M. Kesaria, O. Makarovsky, A. Velichko, L. Eaves, N. Mori, A. Krier, and A. Patanè, "Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode," Scientific Reports, Vol. 6, 32039 (1-8), 2016, DOI: 10.1038/srep32039
  7. G. Mil'nikov and N. Mori, "Random phonon model of dissipative electron transport in nanowire MOSFETs," Journal of Computational Electronics, Vol. 15, pp. 1179-1191, 2016, DOI: 10.1007/s10825-016-0865-7

2015

  1. T. Asano, Y. Hirai, S. Tani, S. Yano, I. Jo, T. Matsuoka, "An offset distribution modification technique of stochastic flash ADC," IEICE Electronics Express, Vol. 13, No. 6, pp. 20160115, 2016
  2. R. Suda, M. Yagi, A. Kojima, N. Mori, J. Shirakashi, and N. Koshida, "Reductive deposition of thin Cu films using ballistic hot electrons as a printing beam," Journal of The Electrochemical Society, Vol. 163, No. 6, pp. E162-E165, 2016
  3. J. Bae, S. Radhapuram, I. Jo, T. Kihara, and T. Matsuoka, "A design of 0.7-V 400-MHz digitally controlled oscillator," IEICE Transactions on Electronics, Vol. E98-C, No. 12, pp. 1179-1186, 2015
  4. N. Mori, R. J. A. Hill, A. Patanè, and L. Eaves, "Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors," Journal of Physics: Conference Series, Vol. 647, pp. 012059 (1-4), 2015
  5. A. Suzuki, T. Kamioka, Y. Kamakura, and T. Watanabe, "Particle-based semiconductor device simulation accelerated by GPU computing," Journal of Advanced Simulation in Science and Engineering, Vol. 2, No. 1, pp. 211-224, 2015
  6. G. Wakimura, Y. Yamauchi, and Y. Kamakura, "Simulation and modeling of off-leakage current in InGaZnO thin-film transistors," Journal of Advanced Simulation in Science and Engineering, Vol. 2, No. 1, pp. 201-210, 2015
  7. C. Clendennen, N. Mori, and H. Tsuchiya, "Non-equilibrium Green function simulations of graphene, silicene, and germanene nanoribbon field-effect transistors," Journal of Advanced Simulation in Science and Engineering, Vol. 2, No. 1, pp. 171-177, 2015
  8. J. Bae, S. Radhapuram, I. Jo, T. Kihara, and T. Matsuoka, "A subthreshold low-voltage low-phase-noise CMOS LC-VCO with resistive biasing," Circuits and Systems, Vol. 6, No. 5, pp. 136-142, 2015
  9. I. Jo and T. Matsuoka，"Accurate extraction of effective gate resistance in RF MOSFET," Circuits and Systems，Vol. 6, No. 5, pp. 143–151，2015
  10. M. Ichii, R. Ishida, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa, "Computational study of effects of surface roughness and impurity scattering in Si double-gate junctionless transistors," IEEE Transactions on Electron Devices, Vol. 62, No. 4, pp. 1255-1261, 2015
  11. R. Suda, M. Yagi, A. Kojima, R. Mentek, N. Mori, J. Shirakashi, and N. Koshida, "Deposition of thin Si and Ge films by ballistic hot electron reduction in a solution-dripping mode and its application to the growth of thin SiGe films," Japanese Journal of Applied Physics, Vol. 54, No.4S, 04DH11 (1-5), 2015
  12. Y. Dei, Y. Kishiwada, R. Yamane, T. Inoue, T. Matsuoka, "Low-power wireless on-chip microparticle manipulation system," Japanese Journal of Applied Physics, Vol. 54, No.4S, 04DE10 (1-7), 2015