2023

  1. S. A. Mojtahedzadeh, H. Tanaka, and N. Mori, "Monte Carlo simulation of mobility enhancement in multilayer graphene with turbostratic structure," Japanese Journal of Applied Physics, Vol. 63, 031004 (1-10), 2024, DOI: 10.35848/1347-4065/ad2aa3
  2. Y. Murakami, S. Nagamizo, H. Tanaka, and N. Mori, "Analysis of tunneling probability in heavily doped 4H-SiC Schottky barrier diodes based on complex band structure considering barrier potential," Japanese Journal of Applied Physics, DOI: 10.35848/1347-4065/ad189c
  3. H. Tanaka, T. Kimoto, and N. Mori, "Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC," Materials Science in Semiconductor Processing, Vol. 173, 108126 (1-8), 2024, DOI: 10.1016/j.mssp.2024.108126
  4. K. Utsumi, H. Tanaka, and N Mori, "Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface," Japanese Journal of Applied Physics, Vol. 63, 02SP75 (1-5), 2024, DOI: 10.35848/1347-4065/ad189c
  5. S. Nagamizo, H. Tanaka, and N. Mori, "Wannier-Stark localization of electronic states in 4H-SiC MOS inversion layer," Japanese Journal of Applied Physics, Vol. 63, 02SP62 (1-6), 2024, DOI: 10.35848/1347-4065/ad189a
  6. J.H. Lim and N. Mori, "Statistical model of electronic structure in InAs, InP, GaSb, and Si quantum dots with surface roughness," Japanese Journal of Applied Physics, Vol. 63, 02SP46 (1-9), 2024, DOI: 10.35848/1347-4065/ad15e5
  7. W. Miyazaki, H. Tanaka, and N. Mori, "Full-band Monte Carlo analysis of strain effects on carrier transport in GaN," Japanese Journal of Applied Physics, Vol. 63, 02SP35 (1-14), 2024, DOI: 10.35848/1347-4065/ad1005
  8. J. Okada, H. Tanaka, and N. Mori, "Numerical calculation method for the mean free path of single-mode semiconductor nanosheets with surface roughness," Applied Physics Express, Vol. 16, 091003 (1-4), 2023, DOI: 10.35848/1882-0786/acf5c8
  9. G. Mil'nikov, J. Iwata, N. Mori, and A. Oshiyama, "RSDFT-NEGF transport simulations in realistic nanoscale transistors," Journal of Computational Electronics, Vol. 22, 1181-1201, 2023, DOI: 10.1007/s10825-023-02046-4
  10. K. Matsuda, M. Yamamoto, M. Mikawa, S. Nagaoka, N. Mori, and K. Tsutsui, "Effects of hydrogen radical treatment on piezoresistance coefficients of germanium," Applied Physics Express, Vol. 16, 041003 (1-4), 2023, DOI: 10.35848/1882-0786/acc8b4

2022

  1. W. Miyazaki, H. Tanaka, and N. Mori, "Tight-binding analysis of the effect of strain on the band structure of GaN," Japanese Journal of Applied Physics, Vol. 62, SC1076 (1-9), 2023, DOI: 10.35848/1347-4065/acb7fe
  2. J. Okada, N. Mori, and G. Mil'nikov, "Accuracy of equivalent model in band-to-band tunneling simulation of semiconductor nanowires," Japanese Journal of Applied Physics, Vol. 62, SC1063 (1-7), 2023, DOI: 10.35848/1347-4065/acb3cf
  3. Y. Murakami, S. Nagamizo, H. Tanaka, and N. Mori, "Theoretical analysis of tunneling current in 4H-SiC Schottky barrier diodes under reverse-biased conditions based on the complex band structure," Japanese Journal of Applied Physics, Vol. 62, SC1042 (1-7), 2023, DOI: 10.35848/1347-4065/acaed2
  4. H. Tanaka, T. Kimoto, and N. Mori, "Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes," Journal of Applied Physics, Vol. 131, 225701 (1-12), 2022, DOI: 10.1063/5.0090308
  5. N. Mori and G. Mil'nikov, "Electron and Phonon Transport Simulation for Quantum Hybrid System," In Y. Hirayama, K. Hirakawa, and H. Yamaguchi, editors, Quantum Hybrid Electronics and Materials, chapter 5, pages 73-98 (Springer, Singapore, 2022) DOI: 10.1007/978-981-19-1201-6_5

2021

  1. N. Mori, F. Hashimoto, T. Mishima, and H. Tanaka, "Analytical models for inter-layer tunneling in two-dimensional materials," Japanese Journal of Applied Physics, Vol. 61, SC1022 (1-9), 2022, DOI: 10.35848/1347-4065/ac3f70
  2. J. Okada, F. Hashimoto, and N. Mori, "Equivalent model for band-to-band tunneling simulation of direct-gap III–V semiconductor nanowires," Japanese Journal of Applied Physics, Vol. 60, 091002 (1-6), 2021, DOI: 10.35848/1347-4065/ac1de8
  3. N. Mori, A. Komada, and G. Mil'nikov, "Comparison of linear and quadratic dispersion models for phonon transport in one-dimensional mass-disordered systems," APL Materials, Vol. 9, 08112 (1-7), 2021, DOI: 10.1063/5.0058493
  4. R. Negishi, K. Yamamoto, H. Tanaka, S. A. Mojtahedzadeh, N. Mori, Y. Kobayashi, "Crossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel," Scientific Reports, Vol. 11, 10206 (1-11), 2021, DOI: 10.1038/s41598-021-89709-z

2020

  1. F. Hashimoto, and N. Mori, "Comparative simulation study of intra-layer band-to-band tunneling in monolayer transition metal dichalcogenides," Japanese Journal of Applied Physics, Vol. 60, SBBH12 (1-9), 2021, DOI: 10.35848/1347-4065/abdad1
  2. J. Okada, F. Hashimoto, and N. Mori, "Reduction of order of device Hamiltonian with adaptive moment estimation," Japanese Journal of Applied Physics, Vol. 60, SBBH08 (1-5), 2021, DOI: 10.35848/1347-4065/abd6df
  3. T. Taniguchi, T. Ishibe, R. Hosoda, Y. Wagatsuma, Md. M. Alam, K. Sawano, M. Uenuma, Y. Uraoka, Y. Yamashita, N. Mori, and Y. Nakamura, "Thermoelectric Si1-xGex and Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators," Applied Physics Letters, Vol. 117, 141602 (1-6), 2020, DOI: 10.1063/5.0023820
  4. H. Tanaka and N. Mori, "Analysis of Hall mobility in two-dimensional disordered systems," Semiconductor Science and Technology, Vol. 35, No. 9, 095015 (1-9), 2020, DOI: 10.1088/1361-6641/ab9d0b
  5. F. Hashimoto, H. Tanaka, and N. Mori, "Material dependence of band-to-band tunneling in van der Waals heterojunctions of transition metal dichalcogenides," Journal of Physics D: Applied Physics, Vol. 53, 255107 (1-13), 2020, DOI: 10.1088/1361-6463/ab7ca6
  6. Y. Le Thi, Y. Kamakura, and N. Mori, "A comparison of mechanisms for improving dark current characteristics in barrier infrared photodetectors," Japanese Journal of Applied Physics, Vol. 59, No. 4, 044005 (1-6), 2020, DOI: 10.35848/1347-4065/ab7e77

2019

  1. H. Tanaka, T. Kimoto, and N. Mori, "Theoretical analysis of band structure effects on impact ionization coefficients in wide-bandgap semiconductors," Applied Physics Express, Vol. 13, 041006 (1-4), 2020, DOI: 10.35848/1882-0786/ab7f16
  2. H. Tanaka and N. Mori, "Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron hall mobility in 4H-SiC MOSFETs," Japanese Journal of Applied Physics, Vol. 59, 031006 (1-11), 2020, DOI: 10.35848/1347-4065/ab7271
  3. Q. Lv, F. Yan, N. Mori, W. Zhu, C. Hu, Z. R. Kudrynskyi, Z. D. Kovalyuk, Amalia Patanè, and K. Wang, "Interlayer band-to-band tunneling and negative differential resistance in van der Waals BP/InSe field‐effect transistors," Advanced Functional Materials, Vol. 30, 1910713 (1-7), 2020, DOI: 10.1002/adfm.201910713
  4. S. Sakane, T. Ishibe, K. Mizuta, M. Kashino, K. Watanabe, T. Fujita, Y. Kamakura, N. Mori, and Y. Nakamura, "Methodology of thermoelectric power factor enhancement by nanoscale thermal management in bulk SiGe composites," ACS Applied Energy Materials, Vol. 3, 1235-1241, 2020, DOI: 10.1021/acsaem.9b02340
  5. Y. Le Thi, Y. Kamakura, and N. Mori, "Evaluation of the optical characteristics of a type-II InAs/GaSb superlattice infrared p-i-n photodetector," Japanese Journal of Applied Physics, Vol. 58, 081003 (1-8), 2019, DOI: 10.7567/1347-4065/ab2b67
  6. Y. Kajiwara and N. Mori, "Nonequilibrium Green function simulation of coupled electron–phonon transport in one-dimensional nanostructures," Japanese Journal of Applied Physics, Vol. 58, SDDE05 (1-8), 2019, DOI: 10.7567/1347-4065/ab0df3
  7. S. Makihira and N. Mori, "Intra-collisional field effect in one-dimensional GaN nanowires," Japanese Journal of Applied Physics, Vol. 58, SCCB26 (1-6), 2019, DOI: 10.7567/1347-4065/ab1067
  8. T. Hoshino and N. Mori, "Electron mobility calculation for two-dimensional electron gas in InN/GaN digital alloy channel high electron mobility transistors," Japanese Journal of Applied Physics, Vol. 58, SCCD10 (1-6) 2019, DOI: 10.7567/1347-4065/ab0409
  9. S. Sakane, T. Ishibe, T. Taniguchi, N. Naruse, Y. Mera, T. Fujita, Md. M. Alam, K. Sawano, N. Mori, and Y. Nakamura, "Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled si nanostructures," Materials Today Energy, Vol. 13, 56-63, 2019, DOI: 10.1016/j.mtener.2019.04.014

2018

  1. Y. Le Thi, Y. Kamakura, and N. Mori, "Simulation of dark current characteristics of type-II InAs/GaSb superlattice mid-wavelength infrared p–i–n photodetector", Japanese Journal of Applied Physics, Vol. 58, 044002 (1-7), 2019, DOI: 10.7567/1347-4065/ab03ca
  2. T. Ishibe, A. Tomeda, K. Watanabe, Y. Kamakura, N. Mori, N. Naruse, Y. Mera, Y. Yamashita, and Y. Nakamura, "Methodology of thermoelectric power factor enhancement by controlling nanowire interface," ACS Applied Materials & Interfaces, Vol. 10, 37709–37716, 2018, DOI: 10.1021/acsami.8b13528

2017

  1. K. Tatsumi and T. Matsuoka, "A software level calibration based on Bayesian regression for a successive stochastic approximation analog-to-digital converter system," IEEE Transactions on Cybernetics, DOI: 10.1109/TCYB.2018.2795238
  2. T. Kuroda and N. Mori, "Resonant enhancement of band-to-band tunneling in in-plane MoS2/WS2 heterojunctions," Japanese Journal of Applied Physics, Vol. 57, 04FP03 (1-6), 2018, DOI: 10.7567/JJAP.57.04FP03
  3. T. Hoshino and N. Mori, "Electron mobility of two-dimensional electron gas in InGaN heterostructures: Effects of alloy disorder and random dipole scatterings," Japanese Journal of Applied Physics, Vol. 57, 04FG06 (1-8), 2018, DOI: 10.7567/JJAP.57.04FG06
  4. S. Endo, O. Kubo, N. Nakashima, S. Iwaguma, R. Yamamoto, Y. Kamakura, H. Tabata, and M. Katayama, "√3×√3 germanene on Al(111) grown at nearly room temperature," Applied Physics Express, Vol. 11, 015502 (1-4), 2018, DOI: 10.7567/APEX.11.015502
  5. F. Hashimoto and N. Mori, "Inter-layer coupling effects on vertical electron transport in multilayer graphene nanoribbons," Journal of Physics: Conference Series, Vol. 906, 012004 (1-4), 2017, DOI: 10.1088/1742-6596/906/1/012004
  6. S. Tani, T. Matsuoka, Y. Hirai, T. Kurata, K. Tatsumi, T. Asano, M. Ueda, and T. Kamata, "Behavior-level analysis of a successive stochastic approximation analog-to-digital conversion system for multi-channel biomedical data acquisition," IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, Vol. E100-A, No. 10, pp. 2073-2085, 2017, DOI: 10.1587/transfun.E100.A.2073
  7. O. Makarovsky, L. Turyanska, N. Mori, M. Greenaway, L. Eaves, A. Patanè, M. Fromhold, S. Lara-Avila, S. Kubatkin, and R. Yakimova, "Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots," 2D Materials, Vol. 4, 031001 (1-7), 2017, DOI: 10.1088/2053-1583/aa76bb

2016

  1. T. G. Etoh, A. Q. Nguyen, Y. Kamakura, K. Shimonomura, T. Y. Le, and N. Mori, "The theoretical highest frame rate of silicon image sensors," Sensors, Vol. 17, No. 3, 483 (1-15), 2017, DOI: 10.3390/s17030483
  2. F. Hashimoto, N. Mori, O. Kubo, and M. Katayama, "Electronic states of coupled graphene nanoribbons," Japanese Journal of Applied Physics, Vol. 56, 045001 (1-8), 2017, DOI: 10.7567/JJAP.56.045001
  3. L. Turyanska, O. Makarovsky, L. Eaves, A. Patanè, and N. Mori, "Mobility enhancement of CVD graphene by spatially correlated charges," 2D Materials, Vol. 4, 025026 (1-6), 2017, DOI: 10.1088/2053-1583/aa55b4
  4. R. Suda, M. Yagi, A. Kojima, N. Mori, J. Shirakashi, and N. Koshida, "Liquid-phase deposition of thin Si and Ge films based on ballistic hot electron incidence," Materials Science in Semiconductor Processing, Vol. 70, 44-49, 2017, DOI: 10.1016/j.mssp.2016.12.022
  5. S. Isami, T. Kamata, J. Bae, S. Tani, W. Jun, K. Ohara, and T. Matsuoka, "A study on performance improvement of RF Transmitter IC using genetic algorithm," Microwave and Optical Technology Letters, Vol. 58, No. 12, pp. 2905-2912, 2016, DOI: 10.1002/mop.30180
  6. D. M. Di Paola, M. Kesaria, O. Makarovsky, A. Velichko, L. Eaves, N. Mori, A. Krier, and A. Patanè, "Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode," Scientific Reports, Vol. 6, 32039 (1-8), 2016, DOI: 10.1038/srep32039
  7. G. Mil'nikov and N. Mori, "Random phonon model of dissipative electron transport in nanowire MOSFETs," Journal of Computational Electronics, Vol. 15, pp. 1179-1191, 2016, DOI: 10.1007/s10825-016-0865-7

2015

  1. T. Asano, Y. Hirai, S. Tani, S. Yano, I. Jo, T. Matsuoka, "An offset distribution modification technique of stochastic flash ADC," IEICE Electronics Express, Vol. 13, No. 6, pp. 20160115, 2016
  2. R. Suda, M. Yagi, A. Kojima, N. Mori, J. Shirakashi, and N. Koshida, "Reductive deposition of thin Cu films using ballistic hot electrons as a printing beam," Journal of The Electrochemical Society, Vol. 163, No. 6, pp. E162-E165, 2016
  3. J. Bae, S. Radhapuram, I. Jo, T. Kihara, and T. Matsuoka, "A design of 0.7-V 400-MHz digitally controlled oscillator," IEICE Transactions on Electronics, Vol. E98-C, No. 12, pp. 1179-1186, 2015
  4. N. Mori, R. J. A. Hill, A. Patanè, and L. Eaves, "Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors," Journal of Physics: Conference Series, Vol. 647, pp. 012059 (1-4), 2015
  5. A. Suzuki, T. Kamioka, Y. Kamakura, and T. Watanabe, "Particle-based semiconductor device simulation accelerated by GPU computing," Journal of Advanced Simulation in Science and Engineering, Vol. 2, No. 1, pp. 211-224, 2015
  6. G. Wakimura, Y. Yamauchi, and Y. Kamakura, "Simulation and modeling of off-leakage current in InGaZnO thin-film transistors," Journal of Advanced Simulation in Science and Engineering, Vol. 2, No. 1, pp. 201-210, 2015
  7. C. Clendennen, N. Mori, and H. Tsuchiya, "Non-equilibrium Green function simulations of graphene, silicene, and germanene nanoribbon field-effect transistors," Journal of Advanced Simulation in Science and Engineering, Vol. 2, No. 1, pp. 171-177, 2015
  8. J. Bae, S. Radhapuram, I. Jo, T. Kihara, and T. Matsuoka, "A subthreshold low-voltage low-phase-noise CMOS LC-VCO with resistive biasing," Circuits and Systems, Vol. 6, No. 5, pp. 136-142, 2015
  9. I. Jo and T. Matsuoka，"Accurate extraction of effective gate resistance in RF MOSFET," Circuits and Systems，Vol. 6, No. 5, pp. 143–151，2015
  10. M. Ichii, R. Ishida, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa, "Computational study of effects of surface roughness and impurity scattering in Si double-gate junctionless transistors," IEEE Transactions on Electron Devices, Vol. 62, No. 4, pp. 1255-1261, 2015
  11. R. Suda, M. Yagi, A. Kojima, R. Mentek, N. Mori, J. Shirakashi, and N. Koshida, "Deposition of thin Si and Ge films by ballistic hot electron reduction in a solution-dripping mode and its application to the growth of thin SiGe films," Japanese Journal of Applied Physics, Vol. 54, No.4S, 04DH11 (1-5), 2015
  12. Y. Dei, Y. Kishiwada, R. Yamane, T. Inoue, T. Matsuoka, "Low-power wireless on-chip microparticle manipulation system," Japanese Journal of Applied Physics, Vol. 54, No.4S, 04DE10 (1-7), 2015