International Conferences and Workshops

  1. H. Tanaka, and N. Mori, "Modeling and simulation of carrier transport properties in 4H-SiC," 2024 International VLSI Symposium on Technology, Systems and Applications, April 22-25, 2024, Hsinchu, Taiwan.

International Conferences and Workshops

  1. J. H. Lim and N. Mori, "Shell thickness dependence of strain profile and electronic structure of InP-based colloid quantum dots," The 31st Korean Conference on Semiconductors, January 24-26, 2024, Gyongju, Korea.
  2. S. Kuramoto and N. Mori, "Calculation of electric field distribution in 3D Monte Carlo device simulation using machine learning," The 2023 International Meeting for Future of Electron Devices, Kansai, November 16-17, 2023, Kyoto, Japan.
  3. S. A. Mojtahedzadeh, H. Tanaka, and N. Mori, "Carrier transport simulations in twisted bilayer and turbostratic multilayer graphene systems," The 36th International Microprocesses and Nanotechnology Conference, November 14-17, 2023, Hokkaido, Japan.
  4. N. Mori, G. Mil'nikov, H. Tanaka, J. Okada, J. Iwata, and A. Oshiyama, "Semiconductor device simulation from first principles," The 24th Asian Workshop on First-Principles Electronic Structure, October 30-November1, 2023, Shanghai, China.
  5. J. H. Lim and N. Mori, "Statistical model of electronic structure in disordered quantum dots of InAs, InP, GaSb, and Si," 2023 International Conference on Solid State Devices and Materials, September 5-8, 2023, Nagoya, Japan.
  6. W. Miyazaki, H. Tanaka, and N. Mori, "Full-Band Monte Carlo Analysis of strain effects on carrier transport in GaN," 2023 International Conference on Solid State Devices and Materials, September 5-8, 2023, Nagoya, Japan.
  7. S. Nagamizo, H. Tanaka, and N. Mori, "Wannier-Stark localization of electronic states in 4H-SiC MOS inversion layer," 2023 International Conference on Solid State Devices and Materials, September 5-8, 2023, Nagoya, Japan.
  8. K. Utsumi, H. Tanaka, and N. Mori, "Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface," 2023 International Conference on Solid State Devices and Materials, September 5-8, 2023, Nagoya, Japan.
  9. Y. Murakami, S. Nagamizo, H. Tanaka, and N. Mori, "Analysis of tunneling effects in 4H-SiC Schottky barrier diodes based on complex band structure considering barrier potential," 2023 International Conference on Solid State Devices and Materials, September 5-8, 2023, Nagoya, Japan.
  10. Y. Murakami, S. Nagamizo, H. Tanaka, and N. Mori, "Analysis of tunneling probability using complex bands considering barrier potential," 22nd International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, August 14-18, 2023, Münster, Germany.
  11. W. Miyazaki, H. Tanaka and N. Mori, "Full-band Monte Carlo analysis of the effects of strain on the impact ionization of GaN," 22nd International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, August 14-18, 2023, Münster, Germany.
  12. J. Okada and N. Mori, "Statistical study of the effect of interface roughness on electron mobility in Si nanosheets," 22nd International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, August 14-18, 2023, Münster, Germany.
  13. H. Tanaka, T. Kimoto, and N. Mori, "Impacts of band structures and scattering processes on high-field carrier transport in wide bandgap semiconductors," International Workshop on Computational Nanotechnology, June 12-16, 2023, Barcelona, Spain.

International Conferences and Workshops

  1. W. Miyazaki, H. Tanaka, and N. Mori, "Tight-binding and full-band Monte Carlo analysis of the strain effects in wurtzite GaN," Workshop on Innovative Nanoscale Devices and Systems 2022, December 4-9, 2022, Hawaii, USA.
  2. Y. Murakami, S. Nagamizo, H. Tanaka, and N. Mori, "Theoretical analysis of tunneling effect in 4H-SiC Schottky barrier diodes based on complex band structure," Workshop on Innovative Nanoscale Devices and Systems 2022, December 4-9, 2022, Hawaii, USA.
  3. J. Okada, J. Hattori, K. Fukuda, T. Ikegami, and N. Mori, "Modeling of band-to-band tunneling in ultra-thin GaSb and InAs gate-all-around nanowire tunnel FETs," Workshop on Innovative Nanoscale Devices and Systems 2022, December 4-9, 2022, Hawaii, USA.
  4. F. Tanaka, H. Tanaka, and N. Mori, "Monte Carlo simulation of electron transport in SiC MOS inversion layers considering capture and emission by interface states," 2022 International Meeting for Future of Electron Devices, Kansai, November 28-30, 2022, Kyoto, Japan.
  5. Y. Murakami, S. Nagamizo, H. Tanaka, and N. Mori, "Theoretical analysis of tunneling current in 4H-SiC Schottky barrier diodes under reverse-biased condition based on complex band structure," 2022 International Conference on Solid State Devices and Materials, September 26-29, 2022, Chiba, Japan.
  6. J. Okada, N. Mori, and G. Mil'nikov, "Accuracy of equivalent model in band-to-band tunneling simulation of semiconductor nanowires," 2022 International Conference on Solid State Devices and Materials, September 26-29, 2022, Chiba, Japan.
  7. W. Miyazaki, H. Tanaka, and N. Mori, "Tight-binding analysis of the effect of strain on the band structure of GaN," 2022 International Conference on Solid State Devices and Materials, September 26-29, 2022, Chiba, Japan.
  8. J. H. Lim and N. Mori, "Atomistic modeling of electronic structure of disordered InP quantum dots," 2022 International Conference on Solid State Devices and Materials, September 26-29, 2022, Chiba, Japan.

International Conferences and Workshops

  1. G. Mil'nikov and N. Mori, "Application of the R-matrix approach to large scale NEGF simulations," International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2022, January 11-12, 2022, Virtual Conference
  2. N. Mori, S. Nagamizo, H. Tanaka, and G. Mil'nikov, "Semiconductor device modeling and simulation from an atomistic view," International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2022, January 11-12, 2022, Virtual Conference
  3. H. Tanaka and N. Mori, "Monte Carlo simulation of electron mobility in SiC MOSFETs," 2021 International Meeting for Future of Electron Devices, Kansai, November 19, 2021, Virtual conference
  4. S. Nagamizo, H. Tanaka, and N. Mori, "Analysis of electronic states at SiC MOS interface based on empirical pseudopotential method," 2021 International Meeting for Future of Electron Devices, Kansai, November 19, 2021, Virtual conference
  5. A. Komada and N. Mori, "Impact of anharmonic phonon-phonon scattering on phonon transport in one-dimensional system," 2021 International Meeting for Future of Electron Devices, Kansai, November 18, 2021, Virtual conference
  6. Y. Kunimoto and N. Mori, "Wigner Monte Carlo simulation of quantum superposition states," 2021 International Meeting for Future of Electron Devices, Kansai, November 18, 2021, Virtual conference
  7. N. Mori, F. Hashimoto, T. Mishima, and H. Tanaka, "Analytical models for inter-layer tunneling in two-dimensional materials," 2021 International Conference on Solid State Devices and Materials, September 6-9, 2021, Virtual Conference
  8. S. Nagamizo, H.Tanaka, and N. Mori, "Electronic states in 4H-SiC MOS inversion layers considering crystal structure using empirical pseudopotential method," International Workshop on Computational Nanotechnology, May 26-June 6, 2021, Virtual Conference
  9. J. Okada, F. Hashimoto, and N. Mori, "Equivalent model for tunneling simulation of direct-gap semiconductor nanowires," International Workshop on Computational Nanotechnology, May 26-June 6, 2021, Virtual Conference

International Conferences and Workshops

  1. N. Mori, H. Tanaka, T. Hoshino, and G. Mil'nikov, "Monte Carlo simulation of two-dimensional carrier mobility in wide-gap semiconductor devices," International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021, January 19-21, 2021, Virtual Conference
  2. F. Hashimoto and N. Mori, "Comparative simulation study of intra-layer band-to-band tunneling in monolayer transition metal dichalcogenides," 2020 International Conference on Solid State Devices and Materials, September 27-30, 2020, Virtual Conference
  3. J. Okada, F. Hashimoto, and N. Mori, "Reduction of order of device hamiltonian with adaptive moment estimation," 2020 International Conference on Solid State Devices and Materials, September 27-30, 2020, Virtual Conference
  4. H. Asai, T. Kuroda,K. Fukuda, J. Hattori, T. Ikegami, and N. Mori, "TCAD simulation for transition metal dichalcogenide channel Tunnel FETs consistent with abinitio based NEGF calculation," International Conference on Simulation of Semiconductor Processes and Devices 2020, September 23-October 6, 2020, Virtual Conference
  5. G. Mil'nikov, N. Mori, J. Iwata, and A. Oshiyama, "The RSDFT-EM representation and first principle transport simulations of realistic field-effect transistors," Workshop on "Multiscale Approach from Atoms to Device: Toward Predictive Simulation," International Conference on Simulation of Semiconductor Processes and Devices 2020, September 23-October 6, 2020, Virtual Conference

International Conferences and Workshops

  1. N. Mori, G. Mil'nikov, J. Iwata, and A. Oshiyama, "RSDFT-NEGF quantum transport simulation of ultra-small field-effect transistors," The 4th IEEE Electron Devices Technology and Manufacturing, March 16, 2020, Penang, Malaysia
  2. N. Mori, T. Kamioka, and G. Mil'nikov, "Atomistic Green function simulation of thermal conductance in isotopically disordered armchair-edge graphene nanoribbons," International Symposium on Hybrid Quantum Systems 2019, December 2, 2019, Matsue, Japan
  3. S. A. Mojtahedzadeh and N. Mori, "Effects of impurity concentration on electron transport in multilayer graphene," International Symposium on Hybrid Quantum Systems 2019, December 2, 2019, Matsue, Japan
  4. T. Mishima, H. Tanaka, F. Hashimoto, and N. Mori, "Effects of inelastic scattering on inter-layer tunneling between vertically stacked semiconductor nanoribbons," International Symposium on Hybrid Quantum Systems 2019, December 2, 2019, Matsue, Japan
  5. F. Hashimoto, H. Tanaka, and N. Mori, "NEGF simulation of band-to-band tunneling in TMD heterojunctions," International Symposium on Hybrid Quantum Systems 2019, December 2, 2019, Matsue, Japan
  6. H. Tanaka, N. Mori, and T. Kimoto, "Theoretical study of band structure effects on impact ionization coefficients in wide-bandgap semiconductors," 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), November 12, Okinawa, Japan
  7. H. Tanaka and N. Mori, "Monte Carlo Simulation of Hall Mobility in 4H-SiC MOS Inversion Layers," International Conference on Silicon Carbide and Related Materials 2019, October 2, 2019, Kyoto, Japan
  8. S. Sakane, T. Ishibe, N. Naruse, Y. Mera, Md. Mahfuz Alam, K. Sawano, N. Mori, and Y. Nakamura, "Simultaneous realization of thermoelectric power factor enhancement and thermal conductivity reduction in epitaxial Si films containing β-FeSi2 nanodots," The 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019, July 20, 2019, Miyazaki, Japan
  9. G. Mil'nikov, J. Iwata, N. Mori, and A. Oshiyama, "The first-principle models of quantum transport and atomistic device simulations of realistic semiconductor devices," International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, July 17, 2019, Nara, Japan
  10. F. Hashimoto and N. Mori, "Stacking order dependence of inter-layer tunneling in van der Waals TMDC heterostructures," International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, July 17, 2019, Nara, Japan
  11. Y. Le Thi, Y. Kamakura, and N. Mori, "Device simulation of barrier infrared photodetectors using InAs/GaSb superlattice," International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, July 16, 2019, Nara, Japan
  12. H. Tanaka and N. Mori, "NEGF analysis of classical Hall effect in two-dimensional systems," International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, July 16, 2019, Nara, Japan
  13. T. Mishima, H. Tanaka, F. Hashimoto, and N. Mori, "NEGF simulation of inter-layer tunneling between semiconductor nanoribbons," International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, July 15, 2019, Nara, Japan
  14. L. Turyanska, N. Cottam, C. Zhang, D. Rogers, R. Wheatley, O. Makarovsky, L. Eaves, A. Patanè, and N. Mori, "Surface functionalisation of graphene by colloidal nanocrystals: from atomistic modelling to ultrasensitive photon detectors," International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, July 15, 2019, Nara, Japan
  15. S. A. Mojtahedzadeh and N. Mori, "Monte Carlo simulation of electron transport in multilayer graphene," International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, July 15, 2019, Nara, Japan
  16. F. Hashimoto and N. Mori, "Effect of stacking order on band-to-band tunneling in van der Waals TMDC heterojunctions," International Workshop on Computational Nanotechnology, May 20, 2019, Illinois, USA
  17. T. Kuroda, F. Hashimoto, and N. Mori, "Resonant enhancement of band-to-band tunneling in in-plane MoS2/WS2 heterojunction tunnel transistors," Compound Semiconductor Week 2019, May 20, 2019, Nara, Japan

International Conferences and Workshops

  1. F. Hashimoto and N. Mori, "Study on band-to-band tunneling in van der Waals heterojunctions using NEGF method," International Workshop on Hybrid Quantum Systems, January 8, 2019, Okinawa, Japan
  2. Y. Kajiwara and N. Mori, "NEGF simulation of coupled electron-phonon systems," International Workshop on Hybrid Quantum Systems, January 8, 2019, Okinawa, Japan
  3. F. Hashimoto and N. Mori, "Impact of lattice matching condition on the simulation of band-to-band tunneling in MoS2/Ge van der Waals heterojunctions," Workshop on Innovative Nanoscale Devices and Systems, November 25-30, 2018, Hawaii, USA
  4. S. Makihira and N. Mori, "Zero-eigenvalue method for solving the Barker-Ferry equation in one-dimensional systems," Workshop on Innovative Nanoscale Devices and Systems, November 25-30, 2018, Hawaii, USA
  5. T. Mishima, H. Tanaka, F. Hashimoto, and N. Mori, "Modeling of inter-layer tunneling between semiconductor nanoribbons," Workshop on Innovative Nanoscale Devices and Systems, November 25-30, 2018, Hawaii, USA
  6. Y. Kajiwara and N. Mori, "Nonequilibrium Green function simulation of coupled electron-phonon transport in one-dimensional nanostructure," 31st International Microprocesses and Nanotechnology Conference, November 13-16, 2018, Sapporo, Japan
  7. T. Kuroda, F. Hashimoto and N. Mori, "Self-consistent simulations of transport characteristics in-plane MoS2/WS2 heterojunction tunnel transistors," 31st International Microprocesses and Nanotechnology Conference, November 13-16, 2018, Sapporo, Japan
  8. N. Mori, T. Kamioka and G. Mil'nikov, "Anomalous phonon diffusion in isotopically disordered armchair-edge graphene nanoribbons," 31st International Microprocesses and Nanotechnology Conference, November 13-16, 2018, Sapporo, Japan
  9. S. Makihira and N Mori, "Intra-collisional field effect in one-dimensional GaN nanowires," International Workshop on Nitride Semiconductors 2018, November 11-16, 2018, Kanazawa, Japan
  10. T. Hoshino and N. Mori, "Electron mobility calculation for two-dimensional electron gas in InN/GaN digital alloy channel HEMTs," International Workshop on Nitride Semiconductors 2018, November 11-16, 2018, Kanazawa, Japan
  11. H. Tanaka and N. Mori, "Simulation of electron mobility in 4H-SiC MOS interface focusing on impacts of interface states,", 14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, October 21-25, 2018, Sendai, Japan
  12. N. Mori, G. Mil'nikov, J. Iwata, and A. Oshiyama, "Quantum transport device simulation based on real-space density functional theory and non-equilibrium Green's function method," International Union of Materials Research Societies - International Conference on Electronic Materials 2018, August 19-24, 2018, Daejeon, Korea
  13. M. Tomita, S. Ohba, Y. Himeda, R. Yamato, K. Shima, T. Kumada, M. Xu, H. Takezawa, K. Mesaki, K. Tsuda, S. Hashimoto, T. Zhan, H. Zhang, Y. Kamakura, Y. Suzuki, H. Inokawa, H. Ikeda, T. Matsukawa, T. Matsuki, T. Watanabe, "10 μW/cm2-class high power density planar Si-nanowire thermoelectric energy harvester compatible with CMOS-VLSI technology," 2018 Symposia on VLSI Technology and Circuits, June 18-22, 2018, Hawaii, USA

International Conferences and Workshops

  1. Y. Le Thi, Y. Kamakura, T. G. Etoh, and N. Mori, "Analysis of type-II InAs/GaSb superlattice mid-wavelength infrared p-i-n photodetector using device simulation," The 7th International Conference on Integrated Circuits, Design, and Verification, October 5-6, 2017, Hanoi, Vietnam
  2. T. Kuroda and N. Mori, "Resonant enhancement of band-to-band tunneling in in-plane MoS2/WS2 heterojunctions," 2017 International Conference on Solid State Devices and Materials, September 19-22, 2017, Sendai, Japan
  3. T. Hoshino and N. Mori, "Electron mobility of two-dimensional electron gas in InGaN Heterostructures: Effects of alloy disorder and random dipole scatterings," 2017 International Conference on Solid State Devices and Materials, September 19-22, 2017, Sendai, Japan
  4. F. Hashimoto and N. Mori, "Ballistic electron transport in coupled graphene nanoribbons," International Symposium on Hybrid Quantum Systems 2017, September 10-13, Miyagi-Zao, Japan
  5. Y. Kajiwara and N. Mori, "Coupled electron-phonon transport simulation of 1D nanostructures," International Symposium on Hybrid Quantum Systems 2017, September 10-13, Miyagi-Zao, Japan
  6. A. Ueno and N. Mori, "Effects of boundary condition on phonon transport in two-dimensional harmonic lattice," International Symposium on Hybrid Quantum Systems 2017, September 10-13, Miyagi-Zao, Japan
  7. N. Mori, L. Turyanska, O. Makarovsky, A. Patanè, and L. Eaves, "Monte Carlo simulation of carrier transport in hybrid graphene-quantum dot transistors," International Symposium on Hybrid Quantum Systems 2017, September 10-13, Miyagi-Zao, Japan
  8. R. Fujita, K. Konaga, Y. Ueoka, T. Kotani, Y. Kamakura, and N. Mori, "Analysis of anisotropic ionization coefficient in bulk 4H-SiC with full-band monte carlo simulation," International Conference on Simulation of Semiconductor Processes and Devices 2017, September 7-9, Kamakura, Japan
  9. G. Mil'nikov, J. Iwata, N. Mori, and A. Oshiyama, "First-principles calculations of the non-equilibrium polarization in ultra-small Si nanowire devices," International Conference on Simulation of Semiconductor Processes and Devices 2017, September 7-9, Kamakura, Japan
  10. S. Sho and S. Odanaka, "A hybrid MPI/OpenMP parallelization method for a quantum drift diffusion model," International Conference on Simulation of Semiconductor Processes and Devices 2017, September 7-9, Kamakura, Japan
  11. T. Hoshino and N. Mori, "Effects of dipole scattering on electron transport in gallium nitride-based HEMT," The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, July 17–21, 2017, Buffalo, USA
  12. T. Kuroda and N. Mori, "Nonequilibrium Green function simulations of band-to-band tunneling in in-plane MoS2/WS2 heterostructures," The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, July 17–21, 2017, Buffalo, USA
  13. F. Hashimoto and N. Mori, "Inter-layer coupling effects on ballistic electron transport in multilayer graphene," The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, July 17–21, 2017, Buffalo, USA
  14. G. Mil'nikov, N. Mori, J. Iwata, and A. Oshiyama, "Equivalent model representation in first-principles transport simulations of nanowire MOSFETs," The International Workshop on Computational Nanotechnology, June 5-9, 2017, Windermere, UK
  15. T. G. Etoh, A. Q. Nguyen, Y. Kamakura, K. Shimonomura, Y. Le Thi, and N. Mori, "The temporal resolution limit of the silicon image sensors," 2017 International Image Sensor Workshop, May 30 – 2 June, 2017, Hiroshima, Japan

International Conferences and Workshops

  1. T. Irisawa, T. Mori, T. Kuroda, and N. Mori, "Mobility analysis and BTBT simulation of TMDC 2D devices," International Workshop on 2D Materials and Devices beside Platanus, March 22, 2017, Kanagawa, Japan
  2. F. Hashimoto and N. Mori, "Ballistic transport characteristics of multilayer graphene," Project Meeting on MEXT, "Hybrid Quantum Systems" Project, February 27 - March 2, 2017, Wako, Japan
  3. N. Mori, "Mobility enhancement of graphene by spatially correlated charges," Project Meeting on MEXT, "Hybrid Quantum Systems" Project, February 27 - March 2, 2017, Wako, Japan
  4. G. Mil'nikov, "R-matrix and basis representation in quantum transport simulations," International Workshop on Massively Parallel Programming for Quantum Chemistry and Physics 2017, January 9-10, 2017, Kobe, Japan
  5. T. G. Etoh, Q. A. Nguyen, K. Shimonomura, Y. Le Thi, Y. Kamakura, "The Upper-bound frame rate of silicon image sensors," 31st International Congress on High-Speed Imaging and Phtonics, November 7-10, 2016, Osaka, Japan
  6. K. Shimonomura, Q. A. Nguyen, Y. Le Thi, Y. Kamakura, T. G. Etoh, "Simulation analysis of temporal resolution in BSIMCG image sensor," 31st International Congress on High-Speed Imaging and Phtonics, November 7-10, 2016, Osaka, Japan
  7. O. Kubo, N. Mori, H. Tabata, and M. Katayama, "Electronic properties of nanoribbons: Graphenen and silicene," 13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, October 9-15, 2016, Rome, Italy
  8. R. Suda, M. Yagi, A. Kojima, N. Mori, J. Shirakashi, and N. Koshida, "Criterion for ballisticelectron printing of thin metal and group IV films," 2016 International Conference on Solid State Devices and Materials, September 27-29, 2016, Tsukuba, Japan
  9. N. Mori, "Recent progress in NEGF simulation of electron and phonon transport in nano-devices," Short Course, 2016 International Conference on Solid State Devices and Materials, September 26, 2016, Tsukuba, Japan
  10. Y. Kamakura, R. Fujita, K. Konaga, Y. Ueoka, N. Mori, and T. Kotani, "Full band Monte Carlo simulation of impact ionization in wide bandgap semiconductors based on ab initio calculation," International Conference on Simulation of Semiconductor Processes and Devices 2016, September 6, 2016, Nuremberg, Germany
  11. F. Hashimoto, N. Mori, O. Kubo, and M. Katayama, "Electronic states of coupled armchair-edge nanoribbon arrays," The 33rd International Conference on the Physics of Semiconductors, July 31- August 5, 2016, Beijing, China
  12. O. Makarovsky, L. Turyanska, S. A. Svatek, P. H. Beton, C. J. Mellor, A. Patanè, L. Eaves, N. R. Thomas, M. W. Fay, A. J. Marsden, N. R. Wilson, and N. Mori, "Hybrid graphene-quantum dot transistor: Controlling carrier concentration, mobility and photoresponsivity," The 33rd International Conference on the Physics of Semiconductors, July 31- August 5, 2016, Beijing, China
  13. F. Hashimoto, N. Mori, O. Kubo, and M. Katayama, "Electronic states of zigzag-edge nanoribbon lateral superlattices under magnetic fields," The 22nd International Conference on High Magnetic Fields in Semiconductor Physics, July 24-29, 2016, Hokkaido, Japan
  14. Y. Le Thi, N. Minamitani, Y. Kamakura, and T. G. Etoh, "Analysis of ultra-high-speed image sensor based on drift-diffusion model," The 2016 International Meeting for Future of Electron Devices, Kansai, June 23-24, 2016, Kyoto, Japan
  15. M. Shirasawa, M. Dlamini, and Y, Kamakura, "Kinetic Monte Carlo simulation for switching probability of ReRAM," The 2016 International Meeting for Future of Electron Devices, Kansai, June 23-24, 2016, Kyoto, Japan
  16. N. Mori, G. Mil'nikov, J. Iwata, and A. Oshiyama, "R-matrix theory and real space DFT simulation of Si nanowire transistors," The 18th International Symposium on the Physics of Semiconductors and Applications, July 3-7, 2016, Jeju, Korea
  17. L. Turyanska, O. Makarovsky, P. H. Beton, C. J. Mellor, A. Patanè, L. Eaves, M. W. Fay, A. J. Marsden, N. R. Wilson, and N. Mori, "Hybrid graphene-quantum dot transistor: Controlling carrier concentration, mobility, and photoresponsivity," The 7th UK-Japan Symposium on Fundamental Research Advances in Carbon Nanomaterials, June 13, 2016, Burlington House, UK
  18. L. Turyanska, O. Makarovsky, S. A. Svatek, P. H. Beton, C. J. Mellor, A. Patanè, L. Eaves, N. R. Thomas, M. W. Fay, A. J. Marsden, N. R. Wilson, and N. Mori, "Hybrid graphene-quantum dot transistor: Controlling carrier concentration, mobility and photoresponsivity," The 9th International Conference on Quantum Dots, May 22-27, 2016, Jeju, Korea

International Conferences and Workshops

  1. O. Kubo , R. Omura, N. Nakashima, M. Shigehara, R. Kuga, H. Tabata, N. Mori, and M. Katayama, "Distribution of local density of states on silicene nanoribbon array," 23rd International Colloquium on Scanning Probe Microscopy, December 10-12, 2015
  2. H. Minari, G. Pourtois, and N. Mori, "Applications of atomistic simulations to the development of advanced electronic devices," 25th Annual Meeting of MRS-J, December 8-10, 2015, Yokohama, Japan
  3. Y. Kamakura, T. Kotani, K. Konaga, N. Minamitani, G. Wakimura, and N. Mori, "Ab initio study of avalanche breakdown in diamond for power device applications," 2015 IEEE International Electron Devices Meeting, December 7-9, 2015, Washington, USA
  4. K. Konaga, T. Kotani, R. Fujita, Y. Kamakura, and, N. Mori, "Theoretical calculation of impact ionization rate for 4H-SiC in the GW approximation," International Symposium on Advanced Nanodevices and Nanotechnology, November 29-December 4, 2015, Waikoloa, Hawaii
  5. N. Minamitani, V. T. S. Dao, K. Shimonomura, T. G. Etoh, Y. Kamakura, and N. Mori, "Analysis of ultra-high-speed image sensor with Monte Carlo simulation," International Symposium on Advanced Nanodevices and Nanotechnology, November 29-December 4, 2015, Waikoloa, Hawaii
  6. F. Hashimoto, N. Mori, O. Kubo, and M. Katayama, "Electronic structures of zigzag-edge nanoribbon lateral superlattices," International Symposium on Advanced Nanodevices and Nanotechnology, November 29-December 4, 2015, Waikoloa, Hawaii
  7. O. Kubo, R. Omura, N. Nakashima, M. Shigehara, R. Kuga, H. Tabata, N. Mori and M. Katayama, "Mapping of local electronic density of states of silicene nanoribbons using scanning tunneling microscope," 28th International Microprocesses and Nanotechnology Conference, November 10-13, 2015, Toyama, Japan
  8. N. Nakashima, R. Omura, M. Shigehara, R. Kuga, H. Tabata, N. Mori, O. Kubo, and M. Katayama, "Differential conductance mapping of silicene nanoribbons on Ag(110)," 10th International Symposium on Atomic Level Characterizations for New Materials and Devices '15, October 25-30, 2015, Matsue, Japan
  9. J. Bae, S. Radhapuram, I. Jo, T. Kihara, and T. Matsuoka, "A low-voltage design of controller-based ADPLL for implantable biomedical devices,," 2015 IEEE Biomedical Circuits and Systems Conference, October 22-24, 2015, Atlanta, USA
  10. J. Bae, S. Radhapuram, I. Jo, T. Kihara, and T. Matsuoka, "A low-voltage design of digitally-controlled oscillator based on the gm/ID methodology," 2015 IEEE International Symposium on Radio-Frequency Integration Technology, August 26-28, 2015, Sendai, Japan
  11. N. Mori, R. Hill, A. Patanè, and L. Eaves, "Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors," 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, June 29 - July 2, 2015, Salamanca, Spain
  12. C. Clendennen, N. Mori, and H. Tsuchiya, "Comparative simulation study of graphene, silicene, and germanene nanoribbon FETs," 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, June 29 - July 2, 2015, Salamanca, Spain
  13. N. Koshida, R. Mentek, A. Kojima, N. Ikegami, R. Suda, M. Yagi, N. Mori, and J. Shirakashi, "Functional applications of nanostructured silicon," Collaborative Conference on 3D and Materials Research 2015, June 15-19, 2015, Busan, South Korea
  14. F. Hashimoto and N. Mori, "Effects of internal electric field on efficiency of carrier multiplication solar cells," 2015 International Meeting for Future of Electron Devices, Kansai, June 4-5, 2015, Kyoto, Japan
  15. G. Wakimura, T. Matsuoka, and Y. Kamakura, "A simulation study on soft error rate in STT-MRAM," 2015 International Meeting for Future of Electron Devices, Kansai, June 4-5, 2015, Kyoto, Japan
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